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Транзистор IRF7855TRPBF Infineon

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Код товара
8072256077
Артикул
IRF7855TRPBF
Бренд
INFINEON TECHNOLOGIES AG.
Width
4mm
Brand:
Infineon Technologies
Series
HEXFET
Pin Count
8
Цена по запросу
(от 350 ₽)
Минимальный заказ: 16 шт.

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

Транзистор полевой N-канальный 60В 12A 8-SOIC

Технические параметры

Width4mm
Brand:Infineon Technologies
SeriesHEXFET
Pin Count8
Fall Time:12 ns
Rise Time:13 ns
Вес, г1
Technology:Si
Channel ModeEnhancement
Channel TypeN
Package TypeSOIC
Subcategory:MOSFETs
Channel Mode:Enhancement
Manufacturer:Infineon
Mounting TypeSurface Mount
Product Type:MOSFET
Configuration:Single
Mounting Style:SMD/SMT
Package / Case:SOIC-8
Part # Aliases:IRF7855TRPBF SP001555708
Transistor Type:1 N-Channel
Product Category:MOSFET
Qg - Gate Charge:26 nC
Number of Channels:1 Channel
Transistor MaterialSi
Transistor Polarity:N-Channel
Pd - Power Dissipation:2.5 W
Transistor ConfigurationSingle
Maximum Power Dissipation2.5 W
Typical Gate Charge @ Vgs26 nC @ 10 V
Vgs - Gate-Source Voltage:-20 V, +20 V
Maximum Gate Source Voltage-20 V, +20 V
Number of Elements per Chip1
Typical Turn-On Delay Time:8.7 ns
Maximum Drain Source Voltage60 V
Typical Turn-Off Delay Time:16 ns
Maximum Operating Temperature+150 °C
Minimum Operating Temperature-55 °C
Id - Continuous Drain Current:12 A
Maximum Gate Threshold Voltage4.9V
Maximum Operating Temperature:+150 C
Minimum Gate Threshold Voltage3V
Minimum Operating Temperature:-55 C
Forward Transconductance - Min:14 S
Maximum Drain Source Resistance9.4 mΩ
Maximum Continuous Drain Current12 A
Rds On - Drain-Source Resistance:7.4 mOhms
Vds - Drain-Source Breakdown Voltage:60 V
Vgs th - Gate-Source Threshold Voltage:4 V
Factory Pack Quantity: Factory Pack Quantity:4000

Техническая документация