IRF7749L1TRPBF, MOSFETs N-Ch 60V 1.1mOhm 200nC 2.9V Hexfet
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- Код товара
- 8005401906
- Артикул
- IRF7749L1TRPBF
- Бренд
- INFINEON TECHNOLOGIES AG.
- Width
- 7.1mm
- Brand:
- Infineon Technologies
- Series
- DirectFET, HEXFET
- FET Type
- N-Channel
Цена по запросу
(от 696 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Блок питания DirectFET® представляет собой теxнологию поверxностного монтажа силовыx МОП-транзисторов. МОП-транзисторы DirectFET® - это решение для снижения потерь энергии при одновременном сокращении габаритов конструкции в современныx системаx коммутации.
Технические параметры
| Width | 7.1mm |
| Brand: | Infineon Technologies |
| Series | DirectFET, HEXFET |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Fall Time: | 39 ns |
| Rise Time: | 43 ns |
| Technology | MOSFET(Metal Oxide) |
| Tradename: | DirectFET |
| Вес, г | 6 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | DirectFET ISOMETRIC |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Infineon |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Package / Case | DirectFET™ Isometric L8 |
| Mounting Style: | SMD/SMT |
| Package / Case: | DirectFET-L8 |
| Part # Aliases: | IRF7749L1TRPBF SP001555556 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 200 nC |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | N-Channel |
| Forward Diode Voltage | 1.3V |
| Operating Temperature | -55°C ~ 175°C(TJ) |
| Rds On (Max) @ Id, Vgs | 1.5mOhm @ 120A, 10V |
| Особенности | - |
| Pd - Power Dissipation: | 125 W |
| Power Dissipation (Max) | 3.3W(Ta), 125W(Tc) |
| Supplier Device Package | DirectFET™ Isometric L8 |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 125 W |
| Typical Gate Charge @ Vgs | 200 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 17 ns |
| Gate Charge (Qg) (Max) @ Vgs | 300 nC @ 10 V |
| Maximum Drain Source Voltage | 60 V |
| Typical Turn-Off Delay Time: | 78 ns |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
| Drain to Source Voltage (Vdss) | 60 V |
| Id - Continuous Drain Current: | 200 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 280 S |
| Maximum Drain Source Resistance | 1.5 mΩ |
| Maximum Continuous Drain Current | 375 A |
| Rds On - Drain-Source Resistance: | 1.1 mOhms |
| Input Capacitance (Ciss) (Max) @ Vds | 12320 pF @ 25 V |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 33A(Ta), 200A(Tc) |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Factory Pack Quantity: Factory Pack Quantity: | 4000 |
| Максимальное напряжение сток-исток Uси,В | 60 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 3.3 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 1.1мОм |