IRF7495TRPBF, Транзистор N-MOSFET, полевой, 100В, 7,3А, 2,5Вт, SO8
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- Код товара
- 8070122853
- Артикул
- IRF7495TRPBF
- Бренд
- INFINEON TECHNOLOGIES AG.
- Brand
- Infineon
- Brand:
- Infineon Technologies
- Series
- HEXFET
- Pin Count
- 8
Цена по запросу
(от 147,64 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор N-MOSFET, полевой, 100В, 7,3А, 2,5Вт, SO8
Технические параметры
| Brand | Infineon |
| Brand: | Infineon Technologies |
| Series | HEXFET |
| Pin Count | 8 |
| Вес, г | 0.43 |
| Technology: | Si |
| Package Type | SOIC |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Infineon |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOIC-8 |
| Part # Aliases: | IRF7495TRPBF SP001565412 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 34 nC |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | N-Channel |
| Pd - Power Dissipation: | 2.5 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 2.5 W |
| Typical Gate Charge @ Vgs | 34 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 100 V |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 7.3 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature: | -55 C |
| Maximum Drain Source Resistance | 22 mΩ |
| Maximum Continuous Drain Current | 7.3 A |
| Rds On - Drain-Source Resistance: | 22 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Factory Pack Quantity: Factory Pack Quantity: | 4000 |