IRF7480MTRPBF, Транзистор N-МОП, полевой, 40 В 217 А 96 Вт DirectFET ME
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8033183858
- Артикул
- IRF7480MTRPBF
- Бренд
- INFINEON TECHNOLOGIES AG.
- PPAP
- No
- EU RoHS
- Compliant
- Material
- Si
- Mounting
- Surface Mount
Цена по запросу
(от 200 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзисторный МОП-транзистор N-CH Si 40V 330A с 10-контактным прямым выводом ME T/R
Технические параметры
| PPAP | No |
| EU RoHS | Compliant |
| Material | Si |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 10 |
| Automotive | No |
| Lead Shape | No Lead |
| Вес, г | 0.16 |
| PCB changed | 10 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | Direct FET ME |
| Configuration | Single Quad Drain Quint Source |
| Mounting Type | Through Hole |
| Product Category | Power MOSFET |
| Supplier Package | Direct-FET ME |
| Maximum IDSS (uA) | 1 |
| Process Technology | DirectFET |
| Структура | N-МОП |
| Transistor Polarity | N Channel |
| Typical Fall Time (ns) | 58 |
| Typical Rise Time (ns) | 70 |
| Особенности | - |
| Vgs - Gate-Source Voltage | 3.9V @ 150uA |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 40 V |
| Maximum Power Dissipation (mW) | 96000 |
| Typical Gate Charge @ 10V (nC) | 123 |
| Typical Gate Charge @ Vgs (nC) | 123 10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 1035 |
| Typical Turn-On Delay Time (ns) | 21 |
| Maximum Continuous Drain Current | 217 A |
| Maximum Drain Source Voltage (V) | 40 |
| Rds On - Drain-Source Resistance | 1.2mО© @ 132A,10V |
| Typical Gate Plateau Voltage (V) | 4.2 |
| Typical Turn-Off Delay Time (ns) | 68 |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Typical Gate to Drain Charge (nC) | 44 |
| Maximum Gate Threshold Voltage (V) | 3.9 |
| Minimum Gate Threshold Voltage (V) | 2.1 |
| Power Dissipation-Max (Ta=25В°C) | 96W |
| Typical Gate Threshold Voltage (V) | 3 |
| Typical Gate to Source Charge (nC) | 31 |
| Typical Reverse Recovery Time (ns) | 44 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 330 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 6680 25V |
| Typical Reverse Recovery Charge (nC) | 56 |
| Vds - Drain-Source Breakdown Voltage | 40V |
| Maximum Drain Source Resistance (mOhm) | 1.2 10V |
| Continuous Drain Current (Id) @ 25В°C | 217A |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 868 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 700 25V |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 45 |
| Максимальное напряжение сток-исток Uси,В | 40 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 217 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 96 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |