IRF730PBF-BE3, MOSFET, N-CH, 400V, 5.5A, TO-220AB
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8012526883
- Артикул
- IRF730PBF-BE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- PPAP
- No
- ECCN (US)
- EAR99
- Fall Time
- 14 ns
- Packaging
- Tube
Цена по запросу
(от 287 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 400V 5.5A
Технические параметры
| PPAP | No |
| ECCN (US) | EAR99 |
| Fall Time | 14 ns |
| Packaging | Tube |
| Rise Time | 15 ns |
| Automotive | No |
| Technology | Si |
| Вес, г | 2.888 |
| Part Status | Active |
| Subcategory | Transistors |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | Vishay |
| Product Type | MOSFETs |
| Корпус | TO-220AB |
| Configuration | Single |
| Mounting Style | Through Hole |
| Package / Case | TO-220-3 |
| Part # Aliases | IRF730PBF |
| Transistor Type | 1 N-Channel |
| Product Category | Power MOSFET |
| Qg - Gate Charge | 38 nC |
| Number of Channels | 1 Channel |
| Структура | N-Channel |
| Transistor Polarity | N-Channel |
| Pd - Power Dissipation | 74 W |
| Typical Fall Time (ns) | 14 |
| Typical Rise Time (ns) | 15 |
| Особенности | высоковольтный |
| Vgs - Gate-Source Voltage | -20 V, +20 V |
| Typical Turn-On Delay Time | 10 ns |
| Number of Elements per Chip | 1 |
| Typical Turn-Off Delay Time | 38 ns |
| Id - Continuous Drain Current | 5.5 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Maximum Power Dissipation (mW) | 74000 |
| Typical Gate Charge @ 10V (nC) | 38(Max) |
| Typical Gate Charge @ Vgs (nC) | 38(Max)@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 10 |
| Maximum Drain Source Voltage (V) | 400 |
| Rds On - Drain-Source Resistance | 1 Ohms |
| Typical Turn-Off Delay Time (ns) | 38 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 5.5 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 700@25V |
| Vds - Drain-Source Breakdown Voltage | 400 V |
| Maximum Drain Source Resistance (mOhm) | 1000@10V |
| Vgs th - Gate-Source Threshold Voltage | 4 V |
| Пороговое напряжение на затворе | 2…4 В |
| Максимальное напряжение сток-исток Uси,В | 400 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 5.5 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |