IRF730APBF-BE3, Transistor: N-MOSFET
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8062279546
- Артикул
- IRF730APBF-BE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Brand:
- Vishay/Siliconix
- Fall Time:
- 16 ns
- Packaging:
- Tube
- Rise Time:
- 22 ns
Цена по запросу
(от 252,33 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Vishay/Siliconix |
| Fall Time: | 16 ns |
| Packaging: | Tube |
| Rise Time: | 22 ns |
| Вес, г | 2 |
| Technology: | Si |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Manufacturer: | Vishay |
| Package/Case: | TO-220-3 |
| Product Type: | MOSFETs |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Part # Aliases: | IRF730APBF |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 22 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 1000 |
| Pd - Power Dissipation: | 74 W |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Typical Turn-On Delay Time: | 10 ns |
| Typical Turn-Off Delay Time: | 20 ns |
| Id - Continuous Drain Current: | 5.5 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 1 Ohms |
| Vds - Drain-Source Breakdown Voltage: | 400 V |
| Vgs th - Gate-Source Threshold Voltage: | 4.5 V |