IRF6795MTRPBF, Trans MOSFET N-CH Si 25V 32A 7-Pin Direct-FET MX T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8047967603
- Артикул
- IRF6795MTRPBF
- Бренд
- International Rectifier
- PPAP
- No
- Material
- Si
- Mounting
- Surface Mount
- Packaging
- Tape and Reel
Цена по запросу
(от 335 ₽)
Минимальный заказ: 228 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
IRF6795MTRPBF Infineon Technologies AG Транзисторы MOSFETs N-CH Si 25 В 32 А 7-контактный прямой полевой транзистор MX T/R Si - Arrow.com
Технические параметры
| PPAP | No |
| Material | Si |
| Mounting | Surface Mount |
| Packaging | Tape and Reel |
| Pin Count | 7 |
| Automotive | No |
| Lead Shape | No Lead |
| Вес, г | 1 |
| PCB changed | 7 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quad Drain Dual Source |
| Package Width | 5.05(Max)mm |
| Package Length | 5.45(Max)mm |
| Product Category | Power MOSFET |
| Supplier Package | Direct-FET MX |
| Maximum IDSS (uA) | 500 |
| Process Technology | HEXFET |
| Структура | N-Channel |
| Typical Fall Time (ns) | 11 |
| Typical Rise Time (ns) | 27 |
| Особенности | - |
| Typical Switch Charge (nC) | 14.8 |
| Number of Elements per Chip | 1 |
| Maximum Gate Resistance (Ohm) | 2.2 |
| Maximum Power Dissipation (mW) | 2800 |
| Typical Gate Charge @ Vgs (nC) | 35@4.5V |
| Maximum Gate-Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 1280 |
| Typical Turn-On Delay Time (ns) | 16 |
| Maximum Drain-Source Voltage (V) | 25 |
| Typical Gate Plateau Voltage (V) | 2.9 |
| Typical Turn-Off Delay Time (ns) | 16 |
| Maximum Diode Forward Voltage (V) | 0.75 |
| Typical Gate to Drain Charge (nC) | 10 |
| Maximum Gate Threshold Voltage (V) | 2.35 |
| Minimum Gate Threshold Voltage (V) | 1.35 |
| Typical Gate Threshold Voltage (V) | 1.8 |
| Typical Gate to Source Charge (nC) | 8.8 |
| Typical Reverse Recovery Time (ns) | 27 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Continuous Drain Current (A) | 32 |
| Operating Junction Temperature (°C) | -40 to 150 |
| Typical Input Capacitance @ Vds (pF) | 4280@13V |
| Typical Reverse Recovery Charge (nC) | 34 |
| Maximum Drain-Source Resistance (mOhm) | 1.8@10V |
| Maximum Gate-Source Leakage Current (nA) | 100 |
| Maximum Positive Gate-Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 250 |
| Typical Drain-Source Resistance @ 25°C (mOhm) | 1.4@10V|2.4@4.5V |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 2.8 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 550@13V |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 32 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 45 |
| Пороговое напряжение на затворе | -4 V, +22 V |
| Максимальное напряжение сток-исток Uси,В | 25 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 32 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 208 mOhms |