IRF640PBF-BE3, Транзисторы
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8030879704
- Артикул
- IRF640PBF-BE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Tab
- Tab
- PPAP
- No
- SVHC
- Yes
- Mounting
- Through Hole
Цена по запросу
(от 125 ₽)
Минимальный заказ: 12 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор полевой N-канальный 200В 18А 125Вт
Технические параметры
| Tab | Tab |
| PPAP | No |
| SVHC | Yes |
| Mounting | Through Hole |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Вес, г | 3 |
| PCB changed | 3 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Package Width | 4.65(Max) |
| Package Length | 10.52(Max) |
| Product Category | Power MOSFET |
| Supplier Package | TO-220AB |
| Maximum IDSS (uA) | 25 |
| Standard Package Name | TO |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 36 |
| Typical Rise Time (ns) | 51 |
| Особенности | - |
| Number of Elements per Chip | 1 |
| Maximum Gate Resistance (Ohm) | 3.6 |
| Minimum Gate Resistance (Ohm) | 0.5 |
| Maximum Power Dissipation (mW) | 125000 |
| Typical Gate Charge @ 10V (nC) | 70(Max) |
| Typical Gate Charge @ Vgs (nC) | 70(Max)@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 430 |
| Typical Turn-On Delay Time (ns) | 14 |
| Maximum Drain Source Voltage (V) | 200 |
| Typical Gate Plateau Voltage (V) | 6.5 |
| Typical Turn-Off Delay Time (ns) | 45 |
| Maximum Diode Forward Voltage (V) | 2 |
| Typical Gate to Drain Charge (nC) | 39(Max) |
| Maximum Gate Threshold Voltage (V) | 4 |
| Minimum Gate Threshold Voltage (V) | 2 |
| Typical Gate to Source Charge (nC) | 13(Max) |
| Typical Reverse Recovery Time (ns) | 300 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 18 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 1300@25V |
| Typical Reverse Recovery Charge (nC) | 3400 |
| Maximum Drain Source Resistance (mOhm) | 180@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 72 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 130@25V |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |