N-Channel MOSFET, 18 A, 200 V, 3-Pin TO-220AB IRF640PBF
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- Код товара
- 8014590209
- Артикул
- IRF640PBF
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Width
- 4.7mm
- Brand:
- Vishay Semiconductors
- Series:
- IRF
- Pin Count
- 3
Цена по запросу
(от 327 ₽)
Минимальный заказ: 50 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор N-MOSFET, полевой, 200В, 11А, 125Вт, TO220AB Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| Width | 4.7mm |
| Brand: | Vishay Semiconductors |
| Series: | IRF |
| Pin Count | 3 |
| Fall Time: | 36 ns |
| Packaging: | Tube |
| Rise Time: | 45 ns |
| Вес, г | 1 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | TO-220AB |
| Subcategory: | MOSFETs |
| Корпус | TO-220AB |
| Channel Mode: | Enhancement |
| Manufacturer: | Vishay |
| Mounting Type | Through Hole |
| Package/Case: | TO-220AB-3 |
| Product Type: | MOSFET |
| Configuration: | Single |
| RoHS Compliant | Yes |
| Mounting Style: | Through Hole |
| Part # Aliases: | IRF640PBF-BE3 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 7 nC |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | N-Channel |
| Особенности | - |
| Pd - Power Dissipation: | 125 mW |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 125 W |
| Typical Gate Charge @ Vgs | 70 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 14 ns |
| Maximum Drain Source Voltage | 200 V |
| Typical Turn-Off Delay Time: | 45 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 18 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature: | -55 C |
| Maximum Drain Source Resistance | 180 mΩ |
| Maximum Continuous Drain Current | 18 A |
| Rds On - Drain-Source Resistance: | 180 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 200 V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Крутизна характеристики, S | 6.8 |
| Максимальное напряжение сток-исток Uси,В | 200 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 18 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |