IRF630 TO-220
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8075229241
- Артикул
- IRF630
- Бренд
- STMicroelectronics
- Type
- MOSFET
- Brand
- STMicroelectronics
- Width
- 4.6mm
- Series
- IRF630
Цена по запросу
(от 150 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор N-МОП, полевой, 200В 9A 75Вт TO220AB Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| Type | MOSFET |
| Brand | STMicroelectronics |
| Width | 4.6mm |
| Series | IRF630 |
| Pin Count | 3 |
| Rise Time | 15 ns |
| Technology | Si |
| Вес, г | 1 |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | STMicroelectronics |
| Package Type | TO-220 |
| Product Type | MOSFET |
| Configuration | Single |
| Mounting Type | Through Hole |
| Mounting Style | Through Hole |
| Package / Case | TO-220-3 |
| Transistor Type | 1 N-Channel |
| Product Category | MOSFET |
| Qg - Gate Charge | 31 nC |
| Number Of Channels | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity | N-Channel |
| Factory Pack Quantity | 1000 |
| Pd - Power Dissipation | 75 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 75 W |
| Typical Gate Charge @ Vgs | 31 nC @ 10 V |
| Vgs - Gate-Source Voltage | 10 V |
| Typical Turn-On Delay Time | 10 ns |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 200 V |
| Id - Continuous Drain Current | 9 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -65 C |
| Forward Transconductance - Min | 3 S |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Drain Source Resistance | 400 mΩ |
| Maximum Continuous Drain Current | 9 A |
| Rds On - Drain-Source Resistance | 400 mOhms |
| Vds - Drain-Source Breakdown Voltage | 200 V |
| Vgs Th - Gate-Source Threshold Voltage | 2 V |