IRF540PBF, Транзистор N-MOSFET, полевой, 100В, 20А, 150Вт, TO220AB
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- Код товара
- 8073819463
- Артикул
- IRF540PBF
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Width
- 4.7mm
- RDS-on
- 77@10V mOhm
- Version
- N channel
- Assembly
- THT
Цена по запросу
(от 185,90 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор N-MOSFET, полевой, 100В, 20А, 150Вт, TO220AB Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| Width | 4.7mm |
| RDS-on | 77@10V mOhm |
| Version | N channel |
| Assembly | THT |
| Mounting | Through Hole |
| Enclosure | TO-220 |
| Pin Count | 3 |
| Power loss | 150 W |
| Вес, г | 1.97 |
| Lead Finish | Matte Tin |
| Channel Mode | Enhancement |
| Channel Type | N |
| Max. current | 28 A |
| Package Type | TO-220AB |
| max. Voltage | 100 V |
| Mounting Type | Through Hole |
| Typical Fall Time | 43 ns |
| Typical Rise Time | 44 ns |
| Max Processing Temp | 300 |
| Transistor Material | Si |
| Operating Temperature | -55 to 175 °C |
| Gate Charge Qg @10V (nC) | 7.2x10<sup>-8</sup> C |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 150 W |
| Typical Gate Charge @ Vgs | 72 nC @ 10 V |
| Typical Turn-On Delay Time | 11 ns |
| max. operating temperature | 175 °C |
| min. operating temperature | -55 °C |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-Off Delay Time | 53 ns |
| Maximum Drain Source Voltage | 100 V |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Drain Source Resistance | 77 mΩ |
| Maximum Continuous Drain Current | 28 A |