N-Channel MOSFET, 5.6 A, 100 V, 3-Pin D2PAK IRF510SPBF
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8014506103
- Артикул
- IRF510SPBF
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Tab
- Tab
- ECCN
- EAR99
- PPAP
- No
- HTSUS
- 8541.29.0095
Цена по запросу
(от 149 ₽)
Минимальный заказ: 50 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: N-MOSFET, полевой, 100В, 4А, 43Вт, D2PAK Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| HTSUS | 8541.29.0095 |
| EU RoHS | Compliant with Exemption |
| Package | Tube |
| FET Type | N-Channel |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Pin Count | 3 |
| Vgs (Max) | В±20V |
| Automotive | No |
| Lead Shape | Gull-wing |
| Technology | MOSFET (Metal Oxide) |
| Вес, г | 2.5 |
| PCB changed | 2 |
| Part Status | Active |
| RoHS Status | ROHS3 Compliant |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | D2PAK(TO-263) |
| Configuration | Single |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, DВІPak (2 Leads + Tab), TO-263AB |
| Product Category | Power MOSFET |
| Supplier Package | D2PAK |
| Maximum IDSS (uA) | 25 |
| Vgs(th) (Max) @ Id | 4V @ 250ВµA |
| Структура | N-Channel |
| Base Product Number | IRF510 -> |
| Transistor Material | Si |
| Operating Temperature | -55В°C ~ 175В°C (TJ) |
| Standard Package Name | TO-263 |
| Rds On (Max) @ Id, Vgs | 540mOhm @ 3.4A, 10V |
| Typical Fall Time (ns) | 9.4 |
| Typical Rise Time (ns) | 16 |
| Особенности | - |
| Power Dissipation (Max) | 3.7W (Ta), 43W (Tc) |
| Supplier Device Package | D2PAK |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 3.7 W |
| Typical Gate Charge @ Vgs | 8.3 nC @ 10 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Gate Charge (Qg) (Max) @ Vgs | 8.3nC @ 10V |
| Maximum Drain Source Voltage | 100 V |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
| Drain to Source Voltage (Vdss) | 100V |
| Maximum Power Dissipation (mW) | 3700 |
| Minimum Gate Threshold Voltage | 2V |
| Typical Gate Charge @ 10V (nC) | 8.3(Max) |
| Typical Gate Charge @ Vgs (nC) | 8.3(Max)10V |
| Maximum Drain Source Resistance | 540 mΩ |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 81 |
| Typical Turn-On Delay Time (ns) | 6.9 |
| Maximum Continuous Drain Current | 5.6 A |
| Maximum Drain Source Voltage (V) | 100 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Typical Gate Plateau Voltage (V) | 6.9 |
| Typical Turn-Off Delay Time (ns) | 15 |
| Maximum Diode Forward Voltage (V) | 2.5 |
| Typical Gate to Drain Charge (nC) | 3.8(Max) |
| Maximum Gate Threshold Voltage (V) | 4 |
| Minimum Gate Threshold Voltage (V) | 2 |
| Typical Gate to Source Charge (nC) | 2.3(Max) |
| Typical Reverse Recovery Time (ns) | 100 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Input Capacitance (Ciss) (Max) @ Vds | 180pF @ 25V |
| Maximum Continuous Drain Current (A) | 5.6 |
| Operating Junction Temperature (°C) | -55 to 175 |
| Typical Input Capacitance @ Vds (pF) | 180 25V |
| Typical Reverse Recovery Charge (nC) | 440 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Maximum Drain Source Resistance (mOhm) | 540 10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Current - Continuous Drain (Id) @ 25В°C | 5.6A (Tc) |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 20 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 3.7 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 15 25V |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 40 |
| Максимальное напряжение сток-исток Uси,В | 100 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 5.6 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 43 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |