IRF2805PBF, Транзистор N-МОП, полевой, 55В 75А авто [TO-220AB]
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Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8062028642
- Артикул
- IRF2805PBF
- Бренд
- INFINEON TECHNOLOGIES AG.
- Tab
- Tab
- PPAP
- No
- Q(g)
- 230 nC
- V(DS)
- 55 V
Цена по запросу
(от 247,17 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор N-МОП, полевой, 55В 75А авто [TO-220AB]
Технические параметры
| Tab | Tab |
| PPAP | No |
| Q(g) | 230 nC |
| V(DS) | 55 V |
| Width | 4.83mm |
| P(tot) | 330 W |
| Series | HEXFET |
| EU RoHS | Compliant with Exemption |
| Package | TO-220AB |
| R(thJC) | 0.45 K/W |
| FET Type | N-Channel |
| Material | Si |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 3 |
| Vgs (Max) | ±20V |
| Automotive | No |
| Lead Shape | Through Hole |
| Technology | MOSFET(Metal Oxide) |
| Вес, г | 1.97 |
| Logic level | NO |
| PCB changed | 3 |
| Part Status | Active |
| RoHS Status | RoHS-conform |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | TO-220AB |
| Configuration | Single |
| Mounting Type | Through Hole |
| RDS(on)at 10V | 4.7 mOhm |
| Fast bodydiode | NO |
| Package / Case | TO-220-3 |
| I(D)at Tc=25°C | 75 A |
| Product Category | Power MOSFET |
| Supplier Package | TO-220AB |
| Process Technology | HEXFET |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Transistor Material | Si |
| Operating Temperature | -55°C ~ 175°C(TJ) |
| Standard Package Name | TO-220 |
| Rds On (Max) @ Id, Vgs | 4.7mOhm @ 104A, 10V |
| Typical Fall Time (ns) | 110 |
| Typical Rise Time (ns) | 120 |
| Power Dissipation (Max) | 330W(Tc) |
| Supplier Device Package | TO-220AB |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 330 W |
| Typical Gate Charge @ Vgs | 150 nC @ 10 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Gate Charge (Qg) (Max) @ Vgs | 230 nC @ 10 V |
| Maximum Drain Source Voltage | 55 V |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
| Drain to Source Voltage (Vdss) | 55 V |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Power Dissipation (mW) | 330000 |
| Minimum Gate Threshold Voltage | 2V |
| Typical Gate Charge @ 10V (nC) | 150 |
| Typical Gate Charge @ Vgs (nC) | 150 10V |
| Maximum Drain Source Resistance | 4.7 mΩ |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 14 |
| Maximum Continuous Drain Current | 75 A |
| Maximum Drain Source Voltage (V) | 55 |
| Typical Turn-Off Delay Time (ns) | 68 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Input Capacitance (Ciss) (Max) @ Vds | 5110 pF @ 25 V |
| Maximum Continuous Drain Current (A) | 75 |
| Typical Input Capacitance @ Vds (pF) | 5110 25V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Maximum Drain Source Resistance (mOhm) | 4.7 10V |
| Current - Continuous Drain (Id) @ 25°C | 75A(Tc) |