HEXFET N-Channel MOSFET, 100 A, 200 V, 3-Pin TO-247 IRF200P223
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8032913149
- Артикул
- IRF200P223
- Бренд
- INFINEON TECHNOLOGIES AG.
- Brand:
- Infineon Technologies
- Series
- HEXFET
- Military
- No
- Packaging
- Tube
Цена по запросу
(от 1 495,40 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Семейство мощныx МОП-транзисторов Infineon Strong IRFET™ оптимизировано для работы с низким RDS (on) и высоким током.
Технические параметры
| Brand: | Infineon Technologies |
| Series | HEXFET |
| Military | No |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | No |
| Fall Time: | 62 ns |
| Packaging: | Tube |
| Rise Time: | 66 ns |
| Tradename: | StrongIRFET |
| Вес, г | 2.27 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | TO-247 |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Infineon |
| Mounting Type | Through Hole |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247-3 |
| Part # Aliases: | IRF200P223 SP001582440 |
| Supplier Package | TO-247AC |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 102 nC |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Standard Package Name | TO-247 |
| Особенности | - |
| Pd - Power Dissipation: | 313 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 16 ns |
| Maximum Drain Source Voltage | 200 V |
| Typical Turn-Off Delay Time: | 55 ns |
| Operating Temperature - (??C) | -55~175 |
| Id - Continuous Drain Current: | 100 A |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 93 S |
| Maximum Drain Source Resistance | 11.5 mO |
| Maximum Continuous Drain Current | 100 A |
| Maximum Power Dissipation - (mW) | 313000 |
| Typical Gate Charge @ 10V - (nC) | 68 |
| Typical Gate Charge @ Vgs - (nC) | 68@10V |
| Maximum Gate Source Voltage - (V) | ??20 |
| Rds On - Drain-Source Resistance: | 11.5 mOhms |
| Maximum Drain Source Voltage - (V) | 200 |
| Maximum Gate Threshold Voltage - (V) | 4 |
| Vds - Drain-Source Breakdown Voltage: | 200 V |
| Maximum Continuous Drain Current - (A) | 100 |
| Typical Input Capacitance @ Vds - (pF) | 5094@50V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Maximum Drain Source Resistance - (mOhm) | 11.5@10V |
| Factory Pack Quantity: Factory Pack Quantity: | 400 |
| Максимальное напряжение сток-исток Uси,В | 200 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 100 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 313 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |