IRF1404STRLPBF, MOSFETs MOSFT 40V 162A 4mOhm 160nC
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8005401796
- Артикул
- IRF1404STRLPBF
- Бренд
- INFINEON TECHNOLOGIES AG.
- Tab
- Tab
- PPAP
- No
- SVHC
- Yes
- Brand:
- Infineon/IR
Цена по запросу
(от 259 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор N-МОП, полевой, 40В, 162А, 200Вт, D2PAK
Технические параметры
| Tab | Tab |
| PPAP | No |
| SVHC | Yes |
| Brand: | Infineon/IR |
| Material | Si |
| Mounting | Surface Mount |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Fall Time: | 26 ns |
| Lead Shape | Gull-wing |
| Rise Time: | 140 ns |
| Вес, г | 1.86 |
| PCB changed | 2 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | D²Pak |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | Infineon |
| Mounting Type | Through Hole |
| Package Width | 9.65(Max)mm |
| Package/Case: | TO-263-3 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Package Length | 10.67(Max)mm |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | IRF1404STRLPBF SP001570024 |
| Product Category | Power MOSFET |
| Supplier Package | D2PAK |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 160 nC |
| Process Technology | HEXFET |
| Структура | MOSFET |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Standard Package Name | TO-263 |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 26 |
| Typical Rise Time (ns) | 140 |
| Особенности | - |
| Pd - Power Dissipation: | 200 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 17 ns |
| Maximum Drain Source Voltage | 40 V |
| Typical Turn-Off Delay Time: | 72 ns |
| Id - Continuous Drain Current: | 162 A |
| Maximum Operating Temperature: | +175 C |
| Maximum Power Dissipation (mW) | 3800 |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ 10V (nC) | 160 |
| Typical Gate Charge @ Vgs (nC) | 160@10V |
| Forward Transconductance - Min: | 106 S |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 17 |
| Maximum Continuous Drain Current | 162 A |
| Maximum Drain Source Voltage (V) | 40 |
| Typical Turn-Off Delay Time (ns) | 72 |
| Rds On - Drain-Source Resistance: | 3.5 mOhms |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 162 |
| Typical Input Capacitance @ Vds (pF) | 7360@25V |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Maximum Drain Source Resistance (MOhm) | 4@10V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Factory Pack Quantity: Factory Pack Quantity: | 800 |
| Крутизна характеристики, S | 106 |
| Максимальное напряжение сток-исток Uси,В | 40 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 162 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 200 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 4мОм |