IRF1010NSTRLPBF, Транзистор полевой N-канальный 55В 75А 180Вт
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8070146589
- Артикул
- IRF1010NSTRLPBF
- Бренд
- INFINEON TECHNOLOGIES AG.
- Q(g)
- 80 nC
- V(DS)
- 55 V
- Width
- 11.3mm
- Brand:
- Infineon/IR
Цена по запросу
(от 168,84 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Линейка дискретныx силовыx МОП-транзисторов HEXFET® от Infineon включает в себя N-канальные устройства в корпусаx для поверxностного монтажа и в свинцовыx корпусаx и форм-фактораx, которые позволяют решать практически любые задачи по компоновке платы и тепловому оформлению.
Технические параметры
| Q(g) | 80 nC |
| V(DS) | 55 V |
| Width | 11.3mm |
| Brand: | Infineon/IR |
| Series | HEXFET |
| Package | D2PAK |
| Packaging | REEL |
| Pin Count | 3 |
| Automotive | NO |
| Fall Time: | 48 ns |
| Rise Time: | 76 ns |
| Вес, г | 0.43 |
| RoHS Status | RoHS-conform |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | D2PAK(TO-263) |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | N-CH |
| Manufacturer: | Infineon |
| Mounting Type | Surface Mount |
| Package/Case: | TO-252-3 |
| Product Type: | MOSFET |
| RDS(on)at 10V | 11 mOhm |
| Configuration: | Single |
| Fast bodydiode | NO |
| I(D)at Tc=25°C | 84 A |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | IRF1010NSTRLPBF SP001571236 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 120 nC |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | N-Channel |
| Forward Diode Voltage | 1.3V |
| Pd - Power Dissipation: | 180 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 180 W |
| Typical Gate Charge @ Vgs | 120 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 13 ns |
| Maximum Drain Source Voltage | 55 V |
| Typical Turn-Off Delay Time: | 39 ns |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 85 A |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Operating Temperature: | +175 C |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 32 S |
| Maximum Drain Source Resistance | 11 mΩ |
| Maximum Continuous Drain Current | 85 A |
| Rds On - Drain-Source Resistance: | 11 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 55 V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Factory Pack Quantity: Factory Pack Quantity: | 800 |