IRF100S201, Trans MOSFET N-CH 100V 192A 3-Pin(2+Tab) D2PAK T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001234649
- Артикул
- IRF100S201
- Бренд
- INFINEON TECHNOLOGIES AG.
- Tab
- Tab
- PPAP
- No
- Series
- HEXFETВ®, StrongIRFETв(ў
- EU RoHS
- Compliant with Exemption
Цена по запросу
(от 451 ₽)
Минимальный заказ: 182 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 100V 192A 3-контактный(2+Tab) D2PAK T/R
Технические параметры
| Tab | Tab |
| PPAP | No |
| Series | HEXFETВ®, StrongIRFETв(ў |
| EU RoHS | Compliant with Exemption |
| FET Type | N-Channel |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Vgs (Max) | В±20V |
| Automotive | No |
| Lead Shape | Gull-wing |
| Technology | MOSFET(Metal Oxide) |
| Вес, г | 1 |
| PCB changed | 2 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | Infineon Technologies |
| Package Type | D2PAK(TO-263) |
| Configuration | Single |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, DВІPak(2 Leads+Tab), TO-263AB |
| Product Category | Power MOSFET |
| Standard Package | 1 |
| Supplier Package | D2PAK |
| Maximum IDSS (uA) | 20 |
| Process Technology | HEXFET |
| Vgs(th) (Max) @ Id | 4V @ 250ВµA |
| Структура | N-Channel |
| Operating Temperature | -55В°C ~ 175В°C(TJ) |
| Standard Package Name | TO-263 |
| Rds On (Max) @ Id, Vgs | 4.2 mOhm @ 115A, 10V |
| Typical Fall Time (ns) | 100 |
| Typical Rise Time (ns) | 97 |
| Особенности | - |
| Power Dissipation (Max) | 441W(Tc) |
| Supplier Device Package | DВІPAK(TO-263AB) |
| Number of Elements per Chip | 1 |
| Gate Charge (Qg) (Max) @ Vgs | 255nC @ 10V |
| Maximum Drain Source Voltage | 100 V |
| Drain to Source Voltage (Vdss) | 100V |
| Maximum Power Dissipation (mW) | 441000 |
| Typical Gate Charge @ 10V (nC) | 170 |
| Typical Gate Charge @ Vgs (nC) | 170 10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 660 |
| Typical Turn-On Delay Time (ns) | 17 |
| Maximum Continuous Drain Current | 192 A |
| Maximum Drain Source Voltage (V) | 100 |
| Typical Gate Plateau Voltage (V) | 4.4 |
| Typical Turn-Off Delay Time (ns) | 110 |
| Maximum Diode Forward Voltage (V) | 1.3 |
| Typical Gate to Drain Charge (nC) | 45 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Minimum Gate Threshold Voltage (V) | 2 |
| Typical Gate to Source Charge (nC) | 46 |
| Typical Reverse Recovery Time (ns) | 47 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Input Capacitance (Ciss) (Max) @ Vds | 9500pF @ 50V |
| Maximum Continuous Drain Current (A) | 192 |
| Operating Junction Temperature (°C) | -55 to 175 |
| Typical Input Capacitance @ Vds (pF) | 9500 50V |
| Typical Reverse Recovery Charge (nC) | 90 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Maximum Drain Source Resistance (mOhm) | 4.2 10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Current - Continuous Drain (Id) @ 25В°C | 192A(Tc) |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 690 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 310 50V |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 40 |
| Пороговое напряжение на затворе | 2…4 В |
| Максимальное напряжение сток-исток Uси,В | 100 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 192 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 441 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |