IQE046N08LM5ATMA1, PG-TSON-8 MOSFETs
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8044549756
- Артикул
- IQE046N08LM5ATMA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Brand:
- Infineon Technologies
- Series:
- IQE046N08
- Fall Time:
- 4.4 ns
- Packaging:
- Reel, Cut Tape
Цена по запросу
(от 536 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Infineon Technologies |
| Series: | IQE046N08 |
| Fall Time: | 4.4 ns |
| Packaging: | Reel, Cut Tape |
| Rise Time: | 2.6 ns |
| Вес, г | 1 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Infineon |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | PG-TSON-8 |
| Part # Aliases: | IQE046N08LM5 SP005633158 |
| Transistor Type: | OptiMOS 5 Power Transistor |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 38 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Pd - Power Dissipation: | 100 W |
| Vgs - Gate-Source Voltage: | 20 V |
| Typical Turn-On Delay Time: | 5.2 ns |
| Typical Turn-Off Delay Time: | 18 ns |
| Id - Continuous Drain Current: | 99 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 62 S |
| Rds On - Drain-Source Resistance: | 4.6 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 80 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.3 V |
| Factory Pack Quantity: Factory Pack Quantity: | 5000 |