IQE022N06LM5CGATMA1, Infineon OptiMOS N-Kanal, SMD MOSFET 60 V / 151 A, 9-Pin PG-TTFN-9
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8063786544
- Артикул
- IQE022N06LM5CGATMA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Brand:
- Infineon Technologies
- Series:
- IQE022N06
- Fall Time:
- 5.9 ns
- Packaging:
- Reel, Cut Tape
Цена по запросу
(от 315,52 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Infineon Technologies |
| Series: | IQE022N06 |
| Fall Time: | 5.9 ns |
| Packaging: | Reel, Cut Tape |
| Rise Time: | 4.1 ns |
| Вес, г | 1 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Infineon |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | PG-TTFN-9 |
| Part # Aliases: | IQE022N06LM5CG SP005633132 |
| Transistor Type: | OptiMOS 5 Power Transistor |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 53 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Pd - Power Dissipation: | 100 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 6.1 ns |
| Typical Turn-Off Delay Time: | 26 ns |
| Id - Continuous Drain Current: | 151 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 93 S |
| Rds On - Drain-Source Resistance: | 2.2 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.3 V |
| Factory Pack Quantity: Factory Pack Quantity: | 5000 |