IQDH35N03LM5ATMA1, MOSFETs TRENCH = 40V
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8064040575
- Артикул
- IQDH35N03LM5ATMA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Brand:
- Infineon Technologies
- Fall Time:
- 14 ns
- Packaging:
- Reel, Cut Tape
- Rise Time:
- 5 ns
Цена по запросу
(от 551,48 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Infineon Technologies |
| Fall Time: | 14 ns |
| Packaging: | Reel, Cut Tape |
| Rise Time: | 5 ns |
| Вес, г | 1 |
| Technology: | Si |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Manufacturer: | Infineon |
| Package/Case: | TSON-8 |
| Product Type: | MOSFETs |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | IQDH35N03LM5 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 91 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 5000 |
| Pd - Power Dissipation: | 278 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 12 ns |
| Typical Turn-Off Delay Time: | 70 ns |
| Id - Continuous Drain Current: | 700 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 265 S |
| Rds On - Drain-Source Resistance: | 350 uOhms |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |