IQD009N06NM5ATMA1, 60V 445A 333W 1.27m @6V 3.3V@163uA TSON-8 MOSFETs ROHS
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- Код товара
- 8062493935
- Артикул
- IQD009N06NM5ATMA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Brand:
- Infineon Technologies
- Fall Time:
- 12 ns
- Packaging:
- Reel, Cut Tape
- Rise Time:
- 9 ns
Цена по запросу
(от 510,37 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Infineon Technologies |
| Fall Time: | 12 ns |
| Packaging: | Reel, Cut Tape |
| Rise Time: | 9 ns |
| Вес, г | 0.37 |
| Technology: | Si |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Manufacturer: | Infineon |
| Package/Case: | TSON-8 |
| Product Type: | MOSFETs |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | IQD009N06NM5 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 120 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 5000 |
| Pd - Power Dissipation: | 333 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 17 ns |
| Typical Turn-Off Delay Time: | 34 ns |
| Id - Continuous Drain Current: | 445 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 190 S |
| Rds On - Drain-Source Resistance: | 900 uOhms |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs th - Gate-Source Threshold Voltage: | 3.3 V |