IPW90R500C3XKSA1, MOSFETs LOW POWER_LEGACY
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8070168466
- Артикул
- IPW90R500C3XKSA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Brand:
- Infineon Technologies
- Fall Time:
- 25 ns
- Packaging:
- Tube
- Rise Time:
- 20 ns
Цена по запросу
(от 486 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Infineon Technologies |
| Fall Time: | 25 ns |
| Packaging: | Tube |
| Rise Time: | 20 ns |
| Вес, г | 6 |
| Technology: | Si |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Manufacturer: | Infineon |
| Package/Case: | TO-247-3 |
| Product Type: | MOSFETs |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Part # Aliases: | IPW90R500C3 SP002548900 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 68 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 240 |
| Pd - Power Dissipation: | 156 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 70 ns |
| Typical Turn-Off Delay Time: | 400 ns |
| Id - Continuous Drain Current: | 11 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 500 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 900 V |
| Vgs th - Gate-Source Threshold Voltage: | 3.5 V |