IPW65R190C7XKSA1, Транзистор: N-MOSFET, полевой, 650В, 13А, 72Вт, PG
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- Код товара
- 8070153241
- Артикул
- IPW65R190C7XKSA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Width
- 21.1mm
- Brand:
- Infineon Technologies
- Series
- CoolMOS™ C7
- Pin Count
- 3
Цена по запросу
(от 434 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Infineon предлагает большой и всесторонний ассортимент устройств на МОП-транзистораx, который включает семейства CoolMOS, OptiMOS и StrongIRFET.
Технические параметры
| Width | 21.1mm |
| Brand: | Infineon Technologies |
| Series | CoolMOS™ C7 |
| Pin Count | 3 |
| Fall Time: | 9 ns |
| Packaging: | Tube |
| Rise Time: | 11 ns |
| Вес, г | 8.7 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | TO-247 |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Infineon |
| Mounting Type | Through Hole |
| Package/Case: | TO-247-3 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Part # Aliases: | IPW65R190C7 SP001080142 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 23 nC |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | N-Channel |
| Forward Diode Voltage | 0.9V |
| Factory Pack Quantity: | 240 |
| Pd - Power Dissipation: | 72 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 72 W |
| Typical Gate Charge @ Vgs | 23 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 11 ns |
| Maximum Drain Source Voltage | 700 V |
| Typical Turn-Off Delay Time: | 54 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 13 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Maximum Drain Source Resistance | 190 mΩ |
| Maximum Continuous Drain Current | 13 A |
| Rds On - Drain-Source Resistance: | 168 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 650 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |