IPW65R110CFDAFKSA1, Trans MOSFET N-CH 650V 31.2A 3-Pin(3+Tab) TO-247 Tube Automotive AEC-Q101
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001356385
- Артикул
- IPW65R110CFDAFKSA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Tab
- Tab
- PPAP
- Unknown
- Brand:
- Infineon Technologies
- Series
- CoolMOS
Цена по запросу
(от 1 180 ₽)
Минимальный заказ: 18 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 650V 31,2A Автомобильный AEC-Q101 с 3-контактным разъемом (3+ язычка) TO-247
Технические параметры
| Tab | Tab |
| PPAP | Unknown |
| Brand: | Infineon Technologies |
| Series | CoolMOS |
| EU RoHS | Compliant |
| Series: | CoolMOS CFDA |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | Yes |
| Fall Time: | 6 ns |
| Lead Shape | Through Hole |
| Packaging: | Tube |
| Rise Time: | 11 ns |
| Tradename: | CoolMOS |
| Вес, г | 0.4 |
| PCB changed | 3 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | TO-247 |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | Infineon |
| Mounting Type | Through Hole |
| Product Type: | MOSFET |
| Configuration: | Single |
| Qualification: | AEC-Q101 |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247-3 |
| Part # Aliases: | IPW65R110CFDA SP000895236 |
| Product Category | Power MOSFET |
| Supplier Package | TO-247 |
| Transistor Type: | 1 N-Channel |
| Maximum IDSS (uA) | 1.5 |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 118 nC |
| Process Technology | CoolMOS |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Standard Package Name | TO-247 |
| Typical Fall Time (ns) | 6 |
| Typical Rise Time (ns) | 11 |
| Особенности | автомобильные приложения |
| Pd - Power Dissipation: | 277.8 W |
| Supplier Temperature Grade | Automotive |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 16 ns |
| Maximum Drain Source Voltage | 650 V |
| Typical Turn-Off Delay Time: | 68 ns |
| Id - Continuous Drain Current: | 31.2 A |
| Maximum Gate Threshold Voltage | 4.5V |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 277800 |
| Minimum Operating Temperature: | -40 C |
| Typical Gate Charge @ 10V (nC) | 118 |
| Typical Gate Charge @ Vgs (nC) | 118@10V |
| Maximum Drain Source Resistance | 0.11 O |
| Maximum Gate Source Voltage (V) | 20 |
| Typical Turn-On Delay Time (ns) | 16 |
| Maximum Continuous Drain Current | 99.6 A |
| Maximum Drain Source Voltage (V) | 650 |
| Typical Turn-Off Delay Time (ns) | 68 |
| Rds On - Drain-Source Resistance: | 99 mOhms |
| Maximum Gate Threshold Voltage (V) | 4.5 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Continuous Drain Current (A) | 31.2 |
| Typical Input Capacitance @ Vds (pF) | 3240@100V |
| Vds - Drain-Source Breakdown Voltage: | 650 V |
| Maximum Drain Source Resistance (mOhm) | 110@10V |
| Vgs th - Gate-Source Threshold Voltage: | 3.5 V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Factory Pack Quantity: Factory Pack Quantity: | 240 |
| Пороговое напряжение на затворе | -20 V, +20 V |
| Максимальное напряжение сток-исток Uси,В | 650 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 31.2 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |