IPW60R125C6FKSA1, Транзистор N-МОП, полевой, 600В 30A 219Вт 0,125Ом TO247
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- Код товара
- 8070153243
- Артикул
- IPW60R125C6FKSA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Width
- 5.21mm
- Brand:
- Infineon Technologies
- Series
- CoolMOS C6
- Series:
- CoolMOS C6
Цена по запросу
(от 980 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Infineon предлагает большой и всесторонний ассортимент устройств на МОП-транзистораx, который включает семейства CoolMOS, OptiMOS и StrongIRFET.
Технические параметры
| Width | 5.21mm |
| Brand: | Infineon Technologies |
| Series | CoolMOS C6 |
| Series: | CoolMOS C6 |
| Pin Count | 3 |
| Fall Time: | 7 ns |
| Packaging: | Tube |
| Rise Time: | 12 ns |
| Tradename: | CoolMOS |
| Вес, г | 6.16 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | TO-247 |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Infineon |
| Mounting Type | Through Hole |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247-3 |
| Part # Aliases: | IPW60R125C6 SP000641912 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 96 nC |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | N-Channel |
| Pd - Power Dissipation: | 219 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 219 W |
| Typical Gate Charge @ Vgs | 96 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 15 ns |
| Maximum Drain Source Voltage | 650 V |
| Typical Turn-Off Delay Time: | 83 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 30 A |
| Maximum Gate Threshold Voltage | 3.5V |
| Maximum Operating Temperature: | +150 C |
| Minimum Gate Threshold Voltage | 2.5V |
| Minimum Operating Temperature: | -55 C |
| Maximum Drain Source Resistance | 125 mΩ |
| Maximum Continuous Drain Current | 30 A |
| Rds On - Drain-Source Resistance: | 110 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
| Factory Pack Quantity: Factory Pack Quantity: | 240 |