IPW60R099C6 PG-TO247
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- Код товара
- 8075234315
- Артикул
- IPW60R099C6
- Бренд
- INFINEON TECHNOLOGIES AG.
- Width
- 5.21mm
- Brand:
- Infineon Technologies
- Series
- CoolMOS C6
- Тип
- MOSFET
Цена по запросу
(от 880 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Infineon предлагает большой и всесторонний ассортимент устройств на МОП-транзистораx, который включает семейства CoolMOS, OptiMOS и StrongIRFET.
Технические параметры
| Width | 5.21mm |
| Brand: | Infineon Technologies |
| Series | CoolMOS C6 |
| Тип | MOSFET |
| Military | No |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | No |
| Fall Time: | 6 ns |
| Packaging: | Tube |
| Rise Time: | 12 ns |
| Вес, г | 1 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | TO-247 |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | Infineon |
| Mounting Type | Through Hole |
| Package/Case: | TO-247-3 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Part # Aliases: | IPW6R99C6XK SP000641908 IPW60R099C6FKSA1 |
| Supplier Package | TO-247 |
| Transistor Type: | 1 N-Channel |
| Мощность | рассеиваемая(Pd)-278 Вт |
| Описание | N-Channel MOSFET 600 V 37.9A(Tc)278W(Tc)Through Hole PG-TO247-3-1 |
| Упаковка | TUBE, 30 шт. |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 119 nC |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | N-Channel |
| Емкость, пФ | 2660 |
| Напряжение | пороговое затвора(Vgs th)-3.5 В |
| Standard Package Name | TO-247 |
| Factory Pack Quantity: | 240 |
| Pd - Power Dissipation: | 278 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 278 W |
| Typical Gate Charge @ Vgs | 119 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 15 ns |
| Способ монтажа | Through Hole |
| Maximum Drain Source Voltage | 650 V |
| Typical Turn-Off Delay Time: | 75 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Operating Temperature - (??C) | -55~150 |
| Id - Continuous Drain Current: | 37.9 A |
| Maximum Gate Threshold Voltage | 3.5V |
| Maximum Operating Temperature: | +150 C |
| Minimum Gate Threshold Voltage | 2.5V |
| Minimum Operating Temperature: | -55 C |
| Maximum Drain Source Resistance | 99 mΩ |
| Тип проводимости | N |
| Maximum Continuous Drain Current | 38 A |
| Maximum Power Dissipation - (mW) | 278000 |
| Typical Gate Charge @ 10V - (nC) | 119 |
| Typical Gate Charge @ Vgs - (nC) | 119@10V |
| Maximum Gate Source Voltage - (V) | 20 |
| Rds On - Drain-Source Resistance: | 90 mOhms |
| Заряд затвора, нКл | 119 |
| Maximum Drain Source Voltage - (V) | 600 |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Maximum Continuous Drain Current - (A) | 37.9 |
| Typical Input Capacitance @ Vds - (pF) | 2660@100V |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
| Maximum Drain Source Resistance - (mOhm) | 99@10V |
| Диапазон рабочих температур | -55…+150 °С |
| Максимальный ток стока (при Ta=25C), А | 37.9 |
| Максимально допустимое напряжение | затвор-исток(Vgs)±20 В |
| Транспортная упаковка: размер/кол-во | 60*50*50/120 |
| MSL(Уровень чувствительности к влажности) | 1 |