IPTG017N12NM6ATMA1, PG-HSOG-8-1 Single FETs, MOSFETs ROHS
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8070043396
- Артикул
- IPTG017N12NM6ATMA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Brand:
- Infineon Technologies
- Fall Time:
- 19.8 ns
- Packaging:
- Reel, Cut Tape
- Rise Time:
- 14.8 ns
Цена по запросу
(от 638,76 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Infineon Technologies |
| Fall Time: | 19.8 ns |
| Packaging: | Reel, Cut Tape |
| Rise Time: | 14.8 ns |
| Вес, г | 1 |
| Technology: | Si |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Manufacturer: | Infineon |
| Package/Case: | HSOG-8 |
| Product Type: | MOSFETs |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | IPTG017N12NM6 |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 113 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 1800 |
| Pd - Power Dissipation: | 395 W |
| Typical Turn-On Delay Time: | 18.5 ns |
| Typical Turn-Off Delay Time: | 37.1 ns |
| Id - Continuous Drain Current: | 331 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 125 |
| Vgs th - Gate-Source Threshold Voltage: | 3.1 V |