IPS70R2K0CEAKMA1, IPS70R2K0CEAKMA1
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8048070359
- Артикул
- IPS70R2K0CEAKMA1
- Бренд
- International Rectifier
- Tab
- Tab
- PPAP
- No
- SVHC
- Yes
- Mounting
- Through Hole
Цена по запросу
(от 82 ₽)
Минимальный заказ: 1126 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 700V 4A с 3-контактным разъемом (3+ язычка) TO-251
Технические параметры
| Tab | Tab |
| PPAP | No |
| SVHC | Yes |
| Mounting | Through Hole |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | No |
| Вес, г | 1 |
| PCB changed | 3 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Package Width | 2.3 mm |
| Package Length | 6.6 mm |
| Product Category | Power MOSFET |
| Supplier Package | TO-251 |
| Maximum IDSS (uA) | 1 |
| Process Technology | CoolMOS CE |
| Standard Package Name | TO |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 27 |
| Typical Rise Time (ns) | 9 |
| Особенности | - |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 42000 |
| Typical Gate Charge @ 10V (nC) | 7.8 |
| Typical Gate Charge @ Vgs (nC) | 7.8@10V |
| Maximum Gate-Source Voltage (V) | 20 |
| Typical Turn-On Delay Time (ns) | 6.4 |
| Maximum Drain-Source Voltage (V) | 700 |
| Typical Turn-Off Delay Time (ns) | 25 |
| Typical Gate to Drain Charge (nC) | 4.3 |
| Maximum Gate Threshold Voltage (V) | 3.5 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Continuous Drain Current (A) | 4 |
| Typical Input Capacitance @ Vds (pF) | 163@100V |
| Maximum Drain-Source Resistance (mOhm) | 2000@10V |
| Maximum Gate-Source Leakage Current (nA) | 100 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 6.3 |
| Typical Drain-Source Resistance @ 25°C (mOhm) | 1800@10V |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |