CoolMOS CFDA Type N-Channel MOSFET, 22.4 A, 650 V Enhancement, 3-Pin TO-220 IPP65R150CFDAAKSA1
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8015651368
- Артикул
- IPP65R150CFDAAKSA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Brand:
- Infineon Technologies
- Series
- CoolMOS™ CFDA
- Series:
- CoolMOS CFDA
- Pin Count
- 3
Цена по запросу
(от 1 048,12 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
МОП-транзистор Infineon 650V CoolMOS™ CFDA Superjunction (SJ) - это второе поколение ведущиx на рынке автомобильныx высоковольтныx силовыx МОП-транзисторов CoolMOS™ от Infineon.
Технические параметры
| Brand: | Infineon Technologies |
| Series | CoolMOS™ CFDA |
| Series: | CoolMOS CFDA |
| Pin Count | 3 |
| Fall Time: | 5.6 ns |
| Packaging: | Tube |
| Rise Time: | 7.6 ns |
| Tradename: | CoolMOS |
| Вес, г | 1 |
| Technology: | Si |
| Channel Type | N |
| Package Type | TO-220 |
| Subcategory: | MOSFETs |
| Корпус | TO-220 |
| Channel Mode: | Enhancement |
| Manufacturer: | Infineon |
| Mounting Type | Through Hole |
| Package/Case: | TO-220-3 |
| Product Type: | MOSFET |
| REACH - SVHC: | Details |
| Configuration: | Single |
| Qualification: | AEC-Q101 |
| Mounting Style: | Through Hole |
| Part # Aliases: | IPP65R150CFDA SP000928272 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 86 nC |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Особенности | Enhancement Mode |
| Pd - Power Dissipation: | 195.3 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 12.4 ns |
| Maximum Drain Source Voltage | 650 V |
| Typical Turn-Off Delay Time: | 52.8 ns |
| Id - Continuous Drain Current: | 22.4 A |
| Maximum Gate Threshold Voltage | 4.5V |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -40 C |
| Maximum Drain Source Resistance | 150 mO |
| Maximum Continuous Drain Current | 22.4 A |
| Rds On - Drain-Source Resistance: | 135 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 650 V |
| Vgs th - Gate-Source Threshold Voltage: | 3.5 V |
| Factory Pack Quantity: Factory Pack Quantity: | 500 |
| Максимальное напряжение сток-исток Uси,В | 650 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 22.4 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |