IPP65R125C7XKSA1, MOSFET транзистор IPP65R125C7 SP001080132 INF
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8032830864
- Артикул
- IPP65R125C7XKSA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Qg
- 35 нКл
- Tab
- Tab
- PPAP
- No
- Mounting
- Through Hole
Цена по запросу
(от 520 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор МОП n-канальный, 650В, 18А, 101Вт, PG-TO220-3 Характеристики Категория Транзистор Тип модуль Вид IGBT
Технические параметры
| Qg | 35 нКл |
| Tab | Tab |
| PPAP | No |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Вес, г | 1 |
| PCB changed | 3 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | PG-TO 220 |
| Configuration | Single |
| Product Category | Power MOSFET |
| Supplier Package | TO-220 |
| Maximum IDSS (uA) | 1 |
| Process Technology | CoolMOS |
| Структура | MOSFET |
| Полярность | N-Channel |
| Standard Package Name | TO |
| Тип монтажа | Through Hole |
| Typical Fall Time (ns) | 8 |
| Typical Rise Time (ns) | 15 |
| Особенности | - |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 101000 |
| Typical Gate Charge @ 10V (nC) | 35 |
| Typical Gate Charge @ Vgs (nC) | 35@10V |
| Maximum Gate Source Voltage (V) | 30 |
| Typical Turn-On Delay Time (ns) | 14 |
| Maximum Continuous Drain Current | 18 A |
| Maximum Drain Source Voltage (V) | 650 |
| Typical Turn-Off Delay Time (ns) | 71 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 18 |
| Typical Input Capacitance @ Vds (pF) | 1670@400V |
| Maximum Drain Source Resistance (mOhm) | 125@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Typical Drain Source Resistance @ 25°C (mOhm) | 111@10V |
| Диапазон рабочих температур | -55°C~150°C |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |