IPP60R199CPXKSA1, Транзистор N-МОП, полевой, 600В, 16А, 139Вт, PG-TO220
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8070176217
- Артикул
- IPP60R199CPXKSA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Case
- PG-TO220-3
- Brand:
- Infineon Technologies
- Mounting
- THT
- Fall Time:
- 5 ns
Цена по запросу
(от 382,24 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Case | PG-TO220-3 |
| Brand: | Infineon Technologies |
| Mounting | THT |
| Fall Time: | 5 ns |
| Packaging: | Tube |
| Rise Time: | 5 ns |
| Technology | CoolMOS™ CP |
| Вес, г | 2.08 |
| Technology: | Si |
| Polarisation | unipolar |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Drain current | 16A |
| Manufacturer: | Infineon |
| Package/Case: | TO-220-3 |
| Product Type: | MOSFETs |
| Configuration: | Single |
| Kind of channel | enhancement |
| Kind of package | tube |
| Mounting Style: | Through Hole |
| Part # Aliases: | IPP60R199CP SP000084278 |
| Transistor Type: | 1 N-Channel |
| Power dissipation | 139W |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 43 nC |
| Type of transistor | N-MOSFET |
| Gate-source voltage | ±20V |
| Number of Channels: | 1 Channel |
| On-state resistance | 0.199Ω |
| Drain-source voltage | 600V |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 500 |
| Pd - Power Dissipation: | 139 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 10 ns |
| Typical Turn-Off Delay Time: | 50 ns |
| Id - Continuous Drain Current: | 16 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 180 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |