IPP60R190C6 PG-TO220
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8075232709
- Артикул
- IPP60R190C6
- Бренд
- INFINEON TECHNOLOGIES AG.
- Brand:
- Infineon Technologies
- Series:
- CoolMOS C6
- Fall Time:
- 9 ns
- Packaging:
- Tube
Цена по запросу
(от 410 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Infineon Technologies |
| Series: | CoolMOS C6 |
| Fall Time: | 9 ns |
| Packaging: | Tube |
| Rise Time: | 11 ns |
| Tradename: | CoolMOS |
| Вес, г | 1 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Infineon |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Package / Case: | TO-220-3 |
| Part # Aliases: | SP000621158 IPP6R19C6XK IPP60R190C6XKSA1 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 63 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Pd - Power Dissipation: | 151 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 15 ns |
| Typical Turn-Off Delay Time: | 110 ns |
| Id - Continuous Drain Current: | 20.2 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 170 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
| Factory Pack Quantity: Factory Pack Quantity: | 500 |