IPP60R125CPXKSA1, Транзистор N-МОП, полевой, 600В, 25А, 208Вт, PG-TO220
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- Код товара
- 8070054285
- Артикул
- IPP60R125CPXKSA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Tab
- Tab
- Case
- PG-TO220-3
- PPAP
- No
- EU RoHS
- Compliant
Цена по запросу
(от 548,37 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Tab | Tab |
| Case | PG-TO220-3 |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | No |
| Technology | CoolMOS™ CP |
| Вес, г | 2.09 |
| PCB changed | 3 |
| Part Status | NRND |
| Channel Mode | Enhancement |
| Channel Type | N |
| Polarisation | unipolar |
| Configuration | Single |
| Drain current | 25A |
| Package Width | 4.4 |
| Package Length | 10 |
| Kind of channel | enhanced |
| Kind of package | tube |
| Product Category | Power MOSFET |
| Supplier Package | TO-220 |
| Power dissipation | 208W |
| Process Technology | CoolMOS |
| Type of transistor | N-MOSFET |
| Gate-source voltage | ±20V |
| On-state resistance | 0.125Ω |
| Drain-source voltage | 600V |
| Standard Package Name | TO |
| Typical Fall Time (ns) | 5 |
| Typical Rise Time (ns) | 5 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 208000 |
| Typical Gate Charge @ 10V (nC) | 53 |
| Typical Gate Charge @ Vgs (nC) | 53@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 15 |
| Maximum Drain Source Voltage (V) | 600 |
| Typical Turn-Off Delay Time (ns) | 50 |
| Maximum Gate Threshold Voltage (V) | 3.5 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 25 |
| Typical Input Capacitance @ Vds (pF) | 2500@100V |
| Maximum Drain Source Resistance (mOhm) | 125@10V |