IPP60R099P7XKSA1, MOSFET транзистор PG-TO220-3
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8017541482
- Артикул
- IPP60R099P7XKSA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- ECCN
- EAR99
- HTSUS
- 8541.29.0095
- Brand:
- Infineon Technologies
- Series
- CoolMOSв„ў P7 ->
Цена по запросу
(от 350 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
N-канальный 600 В 31 А (Tc) 117 Вт (Tc) со сквозным отверстием PG-TO220-3
Технические параметры
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Brand: | Infineon Technologies |
| Series | CoolMOSв„ў P7 -> |
| Package | Tube |
| FET Type | N-Channel |
| Pin Count | 3 |
| Vgs (Max) | В±20V |
| Fall Time: | 5 ns |
| Packaging: | Tube |
| Rise Time: | 15 ns |
| Technology | MOSFET (Metal Oxide) |
| Вес, г | 3.2 |
| RoHS Status | ROHS3 Compliant |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | TO-220 |
| REACH Status | REACH Unaffected |
| Subcategory: | MOSFETs |
| Корпус | to220 |
| Channel Mode: | Enhancement |
| Manufacturer: | Infineon |
| Mounting Type | Through Hole |
| Package/Case: | TO-220-3 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Package / Case | TO-220-3 |
| Mounting Style: | Through Hole |
| Part # Aliases: | IPP60R099P7 SP001647032 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 45 nC |
| Vgs(th) (Max) @ Id | 4V @ 530ВµA |
| Структура | MOSFET |
| Base Product Number | IPP60R099 -> |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | N-Channel |
| Operating Temperature | -55В°C ~ 150В°C (TJ) |
| Factory Pack Quantity: | 500 |
| Rds On (Max) @ Id, Vgs | 99mOhm @ 10.5A, 10V |
| Особенности | - |
| Pd - Power Dissipation: | 117 W |
| Power Dissipation (Max) | 117W (Tc) |
| Supplier Device Package | PG-TO220-3 |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 23 ns |
| Gate Charge (Qg) (Max) @ Vgs | 45nC @ 10V |
| Maximum Drain Source Voltage | 600 V |
| Typical Turn-Off Delay Time: | 89 ns |
| Drain to Source Voltage (Vdss) | 600V |
| Id - Continuous Drain Current: | 31 A |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Maximum Drain Source Resistance | 0.099 Ω |
| Maximum Continuous Drain Current | 31 A |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Rds On - Drain-Source Resistance: | 77 mOhms |
| Input Capacitance (Ciss) (Max) @ Vds | 1952pF @ 400V |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Current - Continuous Drain (Id) @ 25В°C | 31A (Tc) |
| Пороговое напряжение на затворе | 4.6V@160uA |
| Максимальная рассеиваемая мощность Pси макс..Вт | 117 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |