IPP60R070CFD7XKSA1, MOSFETs HIGH POWER_NEW, Транзистор
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8070046936
- Артикул
- IPP60R070CFD7XKSA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Brand:
- Infineon Technologies
- Series
- CoolMOS™
- Pin Count
- 3
- Fall Time:
- 6 ns
Цена по запросу
(от 739 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
МОП-транзисторы Infineon, также известные как МОП-транзисторные транзисторы, расшифровываются как "Металлооксидные полупроводниковые полевые транзисторы’.
Технические параметры
| Brand: | Infineon Technologies |
| Series | CoolMOS™ |
| Pin Count | 3 |
| Fall Time: | 6 ns |
| Packaging: | Tube |
| Rise Time: | 23 ns |
| Вес, г | 2 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | TO-220 |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Infineon |
| Mounting Type | Through Hole |
| Package/Case: | TO-220-3 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Part # Aliases: | IPP60R070CFD7 SP001617976 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 67 nC |
| Number of Channels: | 1 Channel |
| Transistor Material | Silicon |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 500 |
| Pd - Power Dissipation: | 156 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 26 ns |
| Maximum Drain Source Voltage | 650 V |
| Typical Turn-Off Delay Time: | 99 ns |
| Id - Continuous Drain Current: | 31 A |
| Maximum Gate Threshold Voltage | 4.5V |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Maximum Drain Source Resistance | 0.07 Ω |
| Maximum Continuous Drain Current | 31 A |
| Rds On - Drain-Source Resistance: | 57 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Vgs th - Gate-Source Threshold Voltage: | 3.5 V |