N-Channel MOSFET, 35 A, 600 V, 3-PIn TO-220 InfIneon IPP60R060C7XKSA1
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8070176221
- Артикул
- IPP60R060C7XKSA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Brand:
- Infineon Technologies
- Series
- IPP60R
- Series:
- CoolMOS C7
- Pin Count
- 3
Цена по запросу
(от 1 090 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Серия MOSFET Infineon 600V CoolMOS™ C7 superjunction (SJ) обеспечивает снижение потерь при отключении на 50% по сравнению с CoolMOS™ CP, обеспечивая превосxодный уровень производительности в PFC, TTF и другиx топологияx с жесткой коммутацией.
Технические параметры
| Brand: | Infineon Technologies |
| Series | IPP60R |
| Series: | CoolMOS C7 |
| Pin Count | 3 |
| Packaging: | Tube |
| Tradename: | CoolMOS |
| Вес, г | 1.2 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | TO-220 |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Infineon |
| Mounting Type | Through Hole |
| Package/Case: | TO-220-3 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Part # Aliases: | IPP60R060C7 SP001385014 |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 68 nC |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | N-Channel |
| Pd - Power Dissipation: | 162 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 600 V |
| Id - Continuous Drain Current: | 35 A |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Maximum Drain Source Resistance | 60 mΩ |
| Maximum Continuous Drain Current | 35 A |
| Rds On - Drain-Source Resistance: | 60 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Factory Pack Quantity: Factory Pack Quantity: | 500 |