IPP50R190CEXKSA1, Транзистор МОП n-канальный, полевой, 500В, 18,5А, 127Вт, Ugs ±20В
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- Код товара
- 8070167833
- Артикул
- IPP50R190CEXKSA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Case
- PG-TO220-3
- Q(g)
- 47.2 nC
- V(DS)
- 500 V
- Width
- 4.57mm
Цена по запросу
(от 282 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Infineon предлагает большой и всесторонний ассортимент устройств на МОП-транзистораx, который включает семейства CoolMOS, OptiMOS и StrongIRFET.
Технические параметры
| Case | PG-TO220-3 |
| Q(g) | 47.2 nC |
| V(DS) | 500 V |
| Width | 4.57mm |
| P(tot) | 127 W |
| Series | CoolMOS™ CE |
| Package | TO-220 |
| R(thJC) | 0.98 K/W |
| Mounting | THT |
| Packaging | TUBE |
| Pin Count | 3 |
| Automotive | NO |
| Technology | CoolMOS™ |
| Вес, г | 2.03 |
| Logic level | NO |
| RoHS Status | RoHS-conform |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | INFINEON TECHNOLOGIES |
| Package Type | TO-220 |
| Polarisation | unipolar |
| Configuration | N-CH |
| Drain current | 18.5A |
| Mounting Type | Through Hole |
| RDS(on)at 10V | 190 mOhm |
| Fast bodydiode | NO |
| I(D)at Tc=25°C | 18.5 A |
| Kind of channel | enhanced |
| Kind of package | tube |
| Power dissipation | 127W |
| Type of transistor | N-MOSFET |
| Gate-source voltage | ±20V |
| On-state resistance | 0.19Ω |
| Transistor Material | Si |
| Drain-source voltage | 500V |
| Forward Diode Voltage | 0.85V |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 127 W |
| Typical Gate Charge @ Vgs | 47.2 nC @ 10 V |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 550 V |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Maximum Gate Threshold Voltage | 3.5V |
| Minimum Gate Threshold Voltage | 2.5V |
| Maximum Drain Source Resistance | 190 mΩ |
| Maximum Continuous Drain Current | 18.5 A |