OptiMOS™ 2 N-Channel MOSFET, 69 A, 100 V, 3-Pin TO-220 IPP12CN10LGXKSA1
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- Код товара
- 8014478369
- Артикул
- IPP12CN10LGXKSA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Width
- 4.57mm
- Brand:
- Infineon Technologies
- Series
- OptiMOS 2
- Series:
- OptiMOS 2
Цена по запросу
(от 300,42 ₽)
Минимальный заказ: 50 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Семейство N-канальныx устройств Infineon OptiMOS™2 обладает самым низким в отрасли сопротивлением при включении в своей группе напряжений.
Технические параметры
| Width | 4.57mm |
| Brand: | Infineon Technologies |
| Series | OptiMOS 2 |
| Series: | OptiMOS 2 |
| Pin Count | 3 |
| Fall Time: | 5 ns |
| Packaging: | Tube |
| Rise Time: | 9 ns |
| Tradename: | OptiMOS |
| Вес, г | 1 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | TO-220 |
| Subcategory: | MOSFETs |
| Корпус | TO-220 |
| Channel Mode: | Enhancement |
| Manufacturer: | Infineon |
| Mounting Type | Through Hole |
| Package/Case: | TO-220-3 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Part # Aliases: | IPP12CN10L G SP000680864 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 58 nC |
| Структура | 2 N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | N-Channel |
| Forward Diode Voltage | 1.2V |
| Особенности | - |
| Pd - Power Dissipation: | 125 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 125 W |
| Typical Gate Charge @ Vgs | 58 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 14 ns |
| Maximum Drain Source Voltage | 100 V |
| Typical Turn-Off Delay Time: | 39 ns |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 69 A |
| Maximum Gate Threshold Voltage | 2.4V |
| Maximum Operating Temperature: | +175 C |
| Minimum Gate Threshold Voltage | 1.2V |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 57 S |
| Maximum Drain Source Resistance | 15.8 mΩ |
| Maximum Continuous Drain Current | 69 A |
| Rds On - Drain-Source Resistance: | 9.9 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.2 V |
| Factory Pack Quantity: Factory Pack Quantity: | 500 |
| Максимальное напряжение сток-исток Uси,В | 100 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 69 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |