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IPP052NE7N3GXKSA1, Транзистор N-МОП, полевой, 75В, 80А, 150Вт, PG-TO220-3

IPP052NE7N3GXKSA1, Транзистор N-МОП, полевой, 75В, 80А, 150Вт, PG-TO220-3

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Код товара
8070169711
Артикул
IPP052NE7N3GXKSA1
Бренд
INFINEON TECHNOLOGIES AG.
Case
PG-TO220-3
ECCN
EAR99
Type
Power MOSFET
HTSUS
8541.29.0095
Цена по запросу
(от 264,56 ₽)

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

Описание Транзистор N-МОП, полевой, 75В, 80А, 150Вт, PG-TO220-3

Технические параметры

CasePG-TO220-3
ECCNEAR99
TypePower MOSFET
HTSUS8541.29.0095
SeriesOptiMOSв„ў ->
PackageTube
FET TypeN-Channel
MountingTHT
PolarityN
PackagingRail/Tube
Pin Count3
Vgs (Max)В±20V
TechnologyMOSFET (Metal Oxide)
Вес, г2.08
RoHS StatusROHS3 Compliant
Channel ModeEnhancement
Channel TypeN
ManufacturerINFINEON TECHNOLOGIES
Package TypePG-TO220
Polarisationunipolar
REACH StatusREACH Unaffected
Rad HardenedNo
Drain current80A
Mounting TypeThrough Hole
Package / CaseTO-220-3
Kind of channelenhanced
Kind of packagetube
Power dissipation150W
Number of Elements1
Type of transistorN-MOSFET
Vgs(th) (Max) @ Id3.8V @ 91ВµA
Base Product NumberIPP052 ->
Drain-Source On-Res0.0052(ohm)
Gate-source voltage±20V
On-state resistance5.2mΩ
Drain-Source On-Volt75(V)
Drain-source voltage75V
Operating Temp Range-55C to 175C
Operating Temperature-55В°C ~ 175В°C (TJ)
Rds On (Max) @ Id, Vgs5.2mOhm @ 80A, 10V
Power Dissipation (Max)150W (Tc)
Supplier Device PackagePG-TO220-3-1
Continuous Drain Current80(A)
Gate-Source Voltage (Max)±20(V)
Number of Elements per Chip1
Gate Charge (Qg) (Max) @ Vgs68nC @ 10V
Drain to Source Voltage (Vdss)75V
Maximum Continuous Drain Current80 A
Moisture Sensitivity Level (MSL)1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds4750pF @ 37.5V
Operating Temperature ClassificationMilitary
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25В°C80A (Tc)

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