OptiMOS™ 3 N-Channel MOSFET, 70 A, 30 V, 3-Pin TO-220 IPP042N03LGXKSA1
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8034146227
- Артикул
- IPP042N03LGXKSA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Tab
- Tab
- Case
- PG-TO220-3
- PPAP
- No
- Width
- 4.57mm
Цена по запросу
(от 250 ₽)
Минимальный заказ: 10 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 30V 70A с 3-контактным разъемом (3+ язычка) для трубки TO-220
Технические параметры
| Tab | Tab |
| Case | PG-TO220-3 |
| PPAP | No |
| Width | 4.57mm |
| Series | OptiMOS 3 |
| EU RoHS | Compliant |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | No |
| Technology | OptiMOS™ 3 |
| Вес, г | 1 |
| PCB changed | 3 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | INFINEON TECHNOLOGIES |
| Package Type | TO-220 |
| Polarisation | unipolar |
| Корпус | TO-220 |
| Configuration | Single |
| Drain current | 70A |
| Mounting Type | Through Hole |
| Kind of channel | enhanced |
| Kind of package | tube |
| Product Category | Power MOSFET |
| Supplier Package | TO-220 |
| Power dissipation | 79W |
| Process Technology | OptiMOS |
| Type of transistor | N-MOSFET |
| Структура | N-Channel |
| Gate-source voltage | ±20V |
| On-state resistance | 4.2mΩ |
| Transistor Material | Si |
| Drain-source voltage | 30V |
| Forward Diode Voltage | 1.1V |
| Standard Package Name | TO-220 |
| Typical Fall Time (ns) | 4.4 |
| Typical Rise Time (ns) | 5.6 |
| Особенности | - |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 79 W |
| Typical Gate Charge @ Vgs | 18 nC @ 4.5 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30 V |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
| Maximum Gate Threshold Voltage | 2.2V |
| Maximum Power Dissipation (mW) | 79000 |
| Minimum Gate Threshold Voltage | 1V |
| Typical Gate Charge @ Vgs (nC) | 18 4.5V |
| Maximum Drain Source Resistance | 6 mΩ |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 7.4 |
| Maximum Continuous Drain Current | 70 A |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Turn-Off Delay Time (ns) | 28 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 70 |
| Typical Input Capacitance @ Vds (pF) | 2900 15V |
| Maximum Drain Source Resistance (MOhm) | 4.2 10V |
| Максимальное напряжение сток-исток Uси,В | 30 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 70 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 79 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±16В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 3.5мОм |