IPP029N06NAKSA1, Trans MOSFET N-CH 60V 100A 3-Pin(3+Tab) TO-220 Tube
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001328636
- Артикул
- IPP029N06NAKSA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Width
- 4.57mm
- Series
- OptiMOS 5
- Military
- No
- Packaging
- Tube
Цена по запросу
(от 288 ₽)
Минимальный заказ: 500 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Infineon предлагает большой и всесторонний ассортимент устройств на МОП-транзистораx, который включает семейства CoolMOS, OptiMOS и StrongIRFET.
Технические параметры
| Width | 4.57mm |
| Series | OptiMOS 5 |
| Military | No |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | No |
| Вес, г | 1 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | TO-220 |
| Mounting Type | Through Hole |
| Supplier Package | TO-220 |
| Process Technology | OptiMOS |
| Transistor Material | Si |
| Standard Package Name | TO-220 |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 136 W |
| Typical Gate Charge @ Vgs | 56 nC @ 10 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 60 V |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
| Operating Temperature - (??C) | -55~175 |
| Maximum Gate Threshold Voltage | 3.3V |
| Minimum Gate Threshold Voltage | 2.1V |
| Maximum Drain Source Resistance | 4.4 mΩ |
| Maximum Continuous Drain Current | 100 A |
| Maximum Power Dissipation - (mW) | 3000 |
| Typical Gate Charge @ 10V - (nC) | 65 |
| Typical Gate Charge @ Vgs - (nC) | 56@10V |
| Maximum Gate Source Voltage - (V) | ??20 |
| Maximum Drain Source Voltage - (V) | 60 |
| Maximum Continuous Drain Current - (A) | 100 |
| Typical Input Capacitance @ Vds - (pF) | 4100@30V |
| Maximum Drain Source Resistance - (mOhm) | 2.9@10V |