IPP028N08N3 G, MOSFETs N-Ch 80V 100A TO220-3 OptiMOS 3
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8060849017
- Артикул
- IPP028N08N3 G
- Бренд
- INFINEON TECHNOLOGIES AG.
- Brand:
- Infineon Technologies
- Fall Time:
- 33 ns
- Packaging:
- Tube
- Rise Time:
- 73 ns
Цена по запросу
(от 291,01 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Infineon Technologies |
| Fall Time: | 33 ns |
| Packaging: | Tube |
| Rise Time: | 73 ns |
| Вес, г | 6 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Infineon |
| Package/Case: | TO-220-3 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Part # Aliases: | IPP28N8N3GXK SP000680766 IPP028N08N3GXKSA1 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 206 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 500 |
| Pd - Power Dissipation: | 300 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 28 ns |
| Typical Turn-Off Delay Time: | 86 ns |
| Id - Continuous Drain Current: | 100 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 2.8 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 80 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |