IPN50R1K4CEATMA1, Trans MOSFET N-CH 500V 4.8A 3-Pin SOT-223 T/R
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- Код товара
- 8002233825
- Артикул
- IPN50R1K4CEATMA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- PPAP
- No
- Q(g)
- 8.2 nC
- V(DS)
- 500 V
- Width
- 3.7mm
Цена по запросу
(от 38 ₽)
Минимальный заказ: 800 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 500V 3.1A 3-контактный SOT-223 T/R
Технические параметры
| PPAP | No |
| Q(g) | 8.2 nC |
| V(DS) | 500 V |
| Width | 3.7mm |
| P(tot) | 5 W |
| Series | CoolMOS™ CE |
| EU RoHS | Compliant with Exemption |
| Package | SOT-223 |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Technology | CoolMOS CE |
| Вес, г | 1 |
| Logic level | NO |
| PCB changed | 3 |
| Part Status | Active |
| RoHS Status | RoHS-conform |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | SOT-223 |
| Корпус | SOT-223 |
| Configuration | Single |
| Mounting Type | Surface Mount |
| RDS(on)at 10V | 1400 mOhm |
| Fast bodydiode | NO |
| I(D)at Tc=25°C | 4.8 A |
| Product Category | Power MOSFET |
| Supplier Package | SOT-223 |
| Maximum IDSS (uA) | 1 |
| Process Technology | CoolMOS CE |
| Структура | N-Channel |
| Forward Diode Voltage | 0.83V |
| Typical Fall Time (ns) | 30 |
| Typical Rise Time (ns) | 6 |
| Особенности | высоковольтный |
| Maximum Power Dissipation | 5 W |
| Typical Gate Charge @ Vgs | 8.2 nC @ 10 V |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 550 V |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -40 °C |
| Maximum Gate Threshold Voltage | 3.5V |
| Maximum Power Dissipation (mW) | 5000 |
| Minimum Gate Threshold Voltage | 2.5V |
| Typical Gate Charge @ 10V (nC) | 8.2 |
| Typical Gate Charge @ Vgs (nC) | 8.2@10V |
| Maximum Drain Source Resistance | 1.4 Ω |
| Maximum Gate Source Voltage (V) | 20 |
| Typical Turn-On Delay Time (ns) | 6.5 |
| Maximum Continuous Drain Current | 4.8 A |
| Maximum Drain Source Voltage (V) | 500 |
| Typical Turn-Off Delay Time (ns) | 23 |
| Maximum Gate Threshold Voltage (V) | 3.5 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Continuous Drain Current (A) | 3.1 |
| Typical Input Capacitance @ Vds (pF) | 178@100V |
| Maximum Drain Source Resistance (mOhm) | 1400@13V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Пороговое напряжение на затворе | 2.5V@250uA |
| Максимальное напряжение сток-исток Uси,В | 500 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 4.8 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |