IPL60R199CP, МОП-транзистор 600V CoolMOSCP Power Transistor
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8017532732
- Артикул
- IPL60R199CP
- Бренд
- INFINEON TECHNOLOGIES AG.
- Type
- -
- Brand:
- Infineon Technologies
- Fall Time:
- 5 ns
- Rise Time:
- 5 ns
Цена по запросу
(от 574,02 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
МОП-транзисторы VSON-4-EP(8.1x8.1) соответствуют требованиям ROHS
Технические параметры
| Type | - |
| Brand: | Infineon Technologies |
| Fall Time: | 5 ns |
| Rise Time: | 5 ns |
| Вес, г | 0.29 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Infineon |
| Package/Case: | ThinPAK-5 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | IPL6R199CPXT SP000841892 IPL60R199CPAUMA1 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 32 nC |
| Moisture Sensitive: | Yes |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 3000 |
| Power Dissipation (Pd) | - |
| Pd - Power Dissipation: | 139 W |
| Total Gate Charge (Qg@Vgs) | - |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Drain Source Voltage (Vdss) | - |
| Typical Turn-On Delay Time: | 10 ns |
| Input Capacitance (Ciss@Vds) | - |
| Typical Turn-Off Delay Time: | 50 ns |
| Continuous Drain Current (Id) | - |
| Id - Continuous Drain Current: | 16.4 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -40 C |
| Rds On - Drain-Source Resistance: | 199 mOhms |
| Gate Threshold Voltage (Vgs(th)@Id) | - |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Vgs th - Gate-Source Threshold Voltage: | 3.5 V |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | - |