IPG20N06S4L-26A, MOSFETs N-Ch 55V 20A TDSON-8
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- Код товара
- 8070030663
- Артикул
- IPG20N06S4L-26A
- Бренд
- INFINEON TECHNOLOGIES AG.
- Brand:
- Infineon Technologies
- Military
- No
- Packaging
- Tape and Reel
- Pin Count
- 8
Цена по запросу
(от 280 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 60V 20A Автомобильный AEC-Q101 8-контактный TDSON EP T/R
Технические параметры
| Brand: | Infineon Technologies |
| Military | No |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | Yes |
| Fall Time: | 10 ns |
| Rise Time: | 1.5 ns |
| Вес, г | 0.11 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Manufacturer: | Infineon |
| Product Type: | MOSFETs |
| Configuration: | Dual |
| Qualification: | AEC-Q101 |
| Mounting Style: | SMD/SMT |
| Package / Case: | TDSON-8 |
| Part # Aliases: | SP001023848 IPG20N06S4L26AATMA1 |
| Supplier Package | TDSON EP |
| Transistor Type: | 2 N-Channel |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 15 nC |
| Process Technology | OptiMOS |
| Number of Channels: | 2 Channel |
| AEC Qualified Number | AEC-Q101 |
| Transistor Polarity: | N-Channel |
| Standard Package Name | SON |
| Factory Pack Quantity: | 5000 |
| Pd - Power Dissipation: | 33 W |
| Vgs - Gate-Source Voltage: | -16 V, +16 V |
| Number of Elements per Chip | 2 |
| Typical Turn-On Delay Time: | 5 ns |
| Typical Turn-Off Delay Time: | 18 ns |
| Operating Temperature - (??C) | -55~175 |
| Id - Continuous Drain Current: | 20 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Maximum Power Dissipation - (mW) | 33000 |
| Typical Gate Charge @ 10V - (nC) | 15 |
| Typical Gate Charge @ Vgs - (nC) | 15@10V |
| Maximum Gate Source Voltage - (V) | ??16 |
| Rds On - Drain-Source Resistance: | 26 mOhms |
| Maximum Drain Source Voltage - (V) | 60 |
| Maximum Gate Threshold Voltage - (V) | 2.2 |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Maximum Continuous Drain Current - (A) | 20 |
| Typical Input Capacitance @ Vds - (pF) | 1100@25V |
| Vgs th - Gate-Source Threshold Voltage: | 1.2 V |
| Maximum Drain Source Resistance - (mOhm) | 26@10V |