IPG20N06S4L-26, 60V 20A 26mOhm@10V,17A 33W 2.2V@10uA 2 N-Channel TDSON-8-4 MOSFETs
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- Код товара
- 8017597158
- Артикул
- IPG20N06S4L-26
- Бренд
- INFINEON TECHNOLOGIES AG.
- RoHS
- Details
- Brand
- Infineon Technologies
- Width
- 5.15 mm
- Brand:
- Infineon Technologies
Цена по запросу
(от 148,71 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
60 В 20 А 26 Мом при 10 В, 17 А 33 Вт 2.2V@10uA 2 N-канальныx МОП-транзистора TDSON-8-4
Технические параметры
| RoHS | Details |
| Brand | Infineon Technologies |
| Width | 5.15 mm |
| Brand: | Infineon Technologies |
| Height | 1.27 mm |
| Length | 5.9 mm |
| Series | OptiMOS-T2 |
| Fall Time | 10 ns, 10 ns |
| Packaging | Reel |
| Rise Time | 1.5 ns, 1.5 ns |
| Tradename | OptiMOS |
| Fall Time: | 10 ns, 10 ns |
| Rise Time: | 1.5 ns, 1.5 ns |
| Technology | Si |
| Вес, г | 0.47 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Manufacturer | Infineon |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | 2 N-Channel |
| Manufacturer: | Infineon |
| Package/Case: | TDSON-8 |
| Product Type: | MOSFET |
| Configuration: | Dual |
| Mounting Style | SMD/SMT |
| Package / Case | TDSON-8 |
| Part # Aliases | IPG20N06S4L26ATMA1 IPG20N06S4L26XT SP000705588 |
| Qualification: | AEC-Q101 |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | IPG2N6S4L26XT SP000705588 IPG20N06S4L26ATMA1 |
| Transistor Type | 2 N-Channel |
| Product Category | MOSFET |
| Qg - Gate Charge | 20 nC, 20 nC |
| Transistor Type: | 2 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 20 nC |
| Number of Channels | 2 Channel |
| Структура | 2 N-Channel |
| Number of Channels: | 2 Channel |
| Transistor Polarity | N-Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity | 5000 |
| Factory Pack Quantity: | 5000 |
| Pd - Power Dissipation | 33 W |
| Особенности | - |
| Pd - Power Dissipation: | 33 W |
| Vgs - Gate-Source Voltage | 16 V, 16 V |
| Typical Turn-On Delay Time | 5 ns, 5 ns |
| Vgs - Gate-Source Voltage: | -16 V, +16 V |
| Typical Turn-Off Delay Time | 18 ns, 18 ns |
| Typical Turn-On Delay Time: | 5 ns, 5 ns |
| Typical Turn-Off Delay Time: | 18 ns, 18 ns |
| Id - Continuous Drain Current | 20 A, 20 A |
| Maximum Operating Temperature | +175 C |
| Minimum Operating Temperature | -55 C |
| Id - Continuous Drain Current: | 20 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance | 21 mOhms, 21 mOhms |
| Rds On - Drain-Source Resistance: | 21 mOhms, 21 mOhms |
| Vds - Drain-Source Breakdown Voltage | 60 V, 60 V |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs th - Gate-Source Threshold Voltage | 1.2 V, 1.2 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.2 V |
| Пороговое напряжение на затворе | -16 V, +16 V |
| Максимальное напряжение сток-исток Uси,В | 60 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 20 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 33 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 26мОм |