IPG20N06S2L50AATMA1, MOSFETs N-Ch 55V 20A TDSON-8
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- Код товара
- 8072707321
- Артикул
- IPG20N06S2L50AATMA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Brand:
- Infineon Technologies
- Fall Time:
- 10 ns
- Rise Time:
- 3 ns
- Tradename:
- OptiMOS
Цена по запросу
(от 151,45 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Infineon Technologies |
| Fall Time: | 10 ns |
| Rise Time: | 3 ns |
| Tradename: | OptiMOS |
| Вес, г | 0.1 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Infineon |
| Product Type: | MOSFET |
| Configuration: | Dual |
| Qualification: | AEC-Q101 |
| Mounting Style: | SMD/SMT |
| Package / Case: | TDSON-8 |
| Part # Aliases: | IPG20N06S2L-50A SP001023842 |
| Transistor Type: | 2 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 17 nC |
| Number of Channels: | 2 Channel |
| Transistor Polarity: | N-Channel |
| Pd - Power Dissipation: | 51 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 2 ns |
| Typical Turn-Off Delay Time: | 15 ns |
| Id - Continuous Drain Current: | 20 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 50 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 55 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.6 V |
| Factory Pack Quantity: Factory Pack Quantity: | 5000 |