IPD90N06S4L05ATMA2, MOSFETs MOSFET
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- Код товара
- 8074076006
- Артикул
- IPD90N06S4L05ATMA2
- Бренд
- INFINEON TECHNOLOGIES AG.
- Brand:
- Infineon Technologies
- Packaging:
- Reel, Cut Tape
- Вес, г
- 0.33
- Technology:
- Si
Цена по запросу
(от 176,87 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Infineon Technologies |
| Packaging: | Reel, Cut Tape |
| Вес, г | 0.33 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Infineon |
| Package/Case: | DPAK-3(TO-252-3) |
| Product Type: | MOSFET |
| Configuration: | Single |
| Qualification: | AEC-Q101 |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | IPD90N06S4L-05 SP001028748 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 110 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 2500 |
| Pd - Power Dissipation: | 107 W |
| Vgs - Gate-Source Voltage: | -16 V, +16 V |
| Id - Continuous Drain Current: | 90 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 4.6 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.7 V |