IPD90N03S4L03ATMA1, Транзистор N-MOSFET, OptiMOS™ T2, полевой, 30В, 90А, Idm 360А
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8062314992
- Артикул
- IPD90N03S4L03ATMA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Tab
- Tab
- PPAP
- Unknown
- SVHC
- Yes
- EU RoHS
- Compliant with Exemption
Цена по запросу
(от 189,90 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Infineon OptiMOS - это силовой МОП-транзистор для автомобильной промышленности. Рабочий канал - N. Он соответствует стандарту AEC Q101.
Технические параметры
| Tab | Tab |
| PPAP | Unknown |
| SVHC | Yes |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | Yes |
| Вес, г | 1 |
| PCB changed | 2 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | DPAK(TO-252) |
| Configuration | Single |
| Mounting Type | Surface Mount |
| Package Width | 6.22 |
| Package Length | 6.5 |
| EDA / CAD Models | IPD90N03S4L03ATMA1 by Ultra Librarian |
| Product Category | Power MOSFET |
| Supplier Package | DPAK |
| Process Technology | OptiMOS |
| Standard Package Name | TO-252 |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 7 |
| Typical Rise Time (ns) | 6 |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30 V |
| Maximum Power Dissipation (mW) | 94000 |
| Typical Gate Charge @ 10V (nC) | 60 |
| Typical Gate Charge @ Vgs (nC) | 60@10V |
| Maximum Gate Source Voltage (V) | ±16 |
| Typical Turn-On Delay Time (ns) | 9 |
| Maximum Continuous Drain Current | 90 A |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Turn-Off Delay Time (ns) | 37 |
| Maximum Gate Threshold Voltage (V) | 2.2 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 90 |
| Typical Input Capacitance @ Vds (pF) | 4000@25V |
| Maximum Drain Source Resistance (mOhm) | 3.3@10V |