OptiMOS™ -T2 N-Channel MOSFET, 90 A, 30 V, 3-Pin DPAK IPD90N03S4L02ATMA1
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8256904003
- Артикул
- IPD90N03S4L02ATMA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Width
- 6.22mm
- Brand:
- Infineon Technologies
- Series
- OptiMOS T2
- Series:
- XPD90N03
Цена по запросу
(от 460 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Новый OptiMOS™ -T2 от Infineon оснащен рядом энергоэффективныx MOSFET-транзисторов с уменьшением выбросов CO2 и электроприводами.
Технические параметры
| Width | 6.22mm |
| Brand: | Infineon Technologies |
| Series | OptiMOS T2 |
| Series: | XPD90N03 |
| Pin Count | 3 |
| Fall Time: | 13 ns |
| Rise Time: | 9 ns |
| Вес, г | 0.3 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | DPAK(TO-252) |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Infineon |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Qualification: | AEC-Q101 |
| Mounting Style: | SMD/SMT |
| Package / Case: | TO-252-3 |
| Part # Aliases: | IPD90N03S4L-02 SP000273284 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 140 nC |
| Структура | 2 N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | N-Channel |
| Особенности | - |
| Pd - Power Dissipation: | 136 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 136 W |
| Typical Gate Charge @ Vgs | 110 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -16 V, +16 V |
| Maximum Gate Source Voltage | -16 V, +16 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 14 ns |
| Maximum Drain Source Voltage | 30 V |
| Typical Turn-Off Delay Time: | 62 ns |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 90 A |
| Maximum Gate Threshold Voltage | 2.2V |
| Maximum Operating Temperature: | +175 C |
| Minimum Gate Threshold Voltage | 1V |
| Minimum Operating Temperature: | -55 C |
| Maximum Drain Source Resistance | 2.6 mΩ |
| Maximum Continuous Drain Current | 90 A |
| Rds On - Drain-Source Resistance: | 1.8 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Максимальное напряжение сток-исток Uси,В | 30 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 90 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |